MPSA18 データシートの表示（PDF） - Motorola => Freescale

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MPSA18

Low Noise Transistor / NPN Silicon

Motorola => Freescale 

MPSA18

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

ON CHARACTERISTICS(2)

DC Current Gain

(IC = 10 µAdc, VCE = 5.0 Vdc)

(IC = 100 µAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base – Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

SMALL– SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Noise Figure

(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz)

(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 100 Hz)

Equivalent Short Circuit Noise Voltage

(IC = 100 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 100 Hz)

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

hFE

400

500

500

500

VCE(sat)

—

—

VBE(on)

—

fT

100

Ccb

—

Ceb

—

NF

—

—

VT

—

Typ

Max

Unit

—

580

—

850

—

1100

—

1150

1500

Vdc

—

0.2

0.08

0.3

0.6

0.7

Vdc

160

—

MHz

1.7

3.0

pF

5.6

6.5

pF

dB

0.5

1.5

4.0

—

6.5

—

nVń ǸHz

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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