MS1076 データシートの表示（PDF） - Advanced Power Technology
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MS1076 Datasheet PDF : 3 Pages
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
Features
• 30 MHz
• 28 VOLTS
• GOLD METALLIZATION
• POUT = 220 W PEP
• GP = 12 dB GAIN MINIMUM
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1076 is a 28 volt epitaxial NPN silicon planar transistor
designed primarily for SSB and VHF communications. This
device utilizes an emitter ballasted die geometry for maximum
ruggedness and reliability.
MS1076
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Device Current
PDISS
TJ
TSTG
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
Value
70
35
4.0
16
320
+200
- 65 to +150
0.7
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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