Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
HYB39S64800ATL-8 データシートの表示(PDF) - Infineon Technologies
部品番号
コンポーネント説明
メーカー
HYB39S64800ATL-8
64Mbit Synchronous DRAM
Infineon Technologies
HYB39S64800ATL-8 Datasheet PDF : 53 Pages
First
Prev
11
12
13
14
15
16
17
18
19
20
Next
Last
Parameter
Refresh Cycle
Refresh Period
(4096 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Data Input to Precharge
(write recovery)
DQM Write Mask Latency
HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
Symbol
Limit Values
Unit
-8
-8B
-10
min. max. min. max. min. max.
t
REF
t
SREX
– 64 – 64 – 64 ms
10 – 10 – 10 – ns
t
OH
3 – 3 – 3 – ns 2
t
LZ
0 – 0 – 0 – ns
t
HZ
3 8 3 10 3 10 ns
t
DQZ
– 2 – 2 – 2 CLK
t
WR
2 – 2 – 2 – CLK
t
DQW
0 – 0 – 0 – CLK
Semiconductor Group
17
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]