NAND01G-A データシートの表示（PDF） - STMicroelectronics

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NAND01G-A

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

STMicroelectronics 

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

Block Erase

Erase operations are done one block at a time. An

erase operation sets all of the bits in the ad-

dressed block to ‘1’. All previous data in the block

is lost.

An erase operation consists of three steps (refer to

Figure 19.):

1. One bus cycle is required to setup the Block

Erase command.

2. Only three bus cycles for 512Mb and 1Gb

devices, or two for 128Mb and 256Mb devices

Figure 19. Block Erase Operation

are required to input the block address. The

first cycle (A0 to A7) is not required as only

addresses A14 to A26 (highest address

depends on device density) are valid, A9 to

A13 are ignored. In the last address cycle I/O2

to I/O7 must be set to VIL.

3. One bus cycle is required to issue the confirm

command to start the P/E/R Controller.

Once the erase operation has completed the Sta-

tus Register can be checked for errors.

RB

I/O

60h

Block Erase

Setup Code

Block Address

Inputs

D0h

Confirm

Code

tBLBH3

(Erase Busy time)

Busy

70h SR0

Read Status Register

ai07593

Reset

The Reset command is used to reset the Com-

mand Interface and Status Register. If the Reset

command is issued during any operation, the op-

eration will be aborted. If it was a program or erase

operation that was aborted, the contents of the

memory locations being modified will no longer be

valid as the data will be partially programmed or

erased.

If the device has already been reset then the new

Reset command will not be accepted.

The Ready/Busy signal goes Low for tBLBH4 after

the Reset command is issued. The value of tBLBH4

depends on the operation that the device was per-

forming when the command was issued, refer to

Table 21. for the values.

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