NCP1611BDR2G(2011) データシートの表示（PDF） - ON Semiconductor

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NCP1611BDR2G
(Rev.:2011)

Enhanced, High-Efficiency Power Factor Controller

ON Semiconductor 

NCP1611

TYPICAL CHARACTERISTICS

250

98

225

200

175

150

−50 −30 −10 10 30 50 70 90 110 130

TJ, JUNCTION TEMPERATURE (°C)

Figure 21. Error Amplifier Transconductance

Gain vs. Temperature

0.5

0.4

0.3

0.2

0.1

0

−50 −30 −10 10 30 50 70 90 110 130

TJ, JUNCTION TEMPERATURE (°C)

Figure 23. Ratio (VOUT Low Detect Hysteresis /

VREF) vs. Temperature

520

515

510

505

500

495

490

485

480

−50 −30 −10 10 30 50 70 90 110 130

TJ, JUNCTION TEMPERATURE (°C)

Figure 25. Current Sense Voltage Threshold

vs. Temperature

97

96

95

94

93

−50 −30 −10 10 30 50 70 90 110 130

TJ, JUNCTION TEMPERATURE (°C)

Figure 22. Ratio (VOUT Low Detect Threshold /

VREF) vs. Temperature

280

260

240

220

200

180

160

140

−50 −30 −10 10 30 50 70 90 110 130

TJ, JUNCTION TEMPERATURE (°C)

Figure 24. VCONTROL Source Current when

(VOUT Low Detect) is Activated for Dynamic

Response Enhancer (DRE) vs. Temperature

280

260

240

220

200

180

160

140

120

−50 −30 −10 10 30 50 70 90 110 130

TJ, JUNCTION TEMPERATURE (°C)

Figure 26. Over−Current Protection Leading

Edge Blanking vs. Temperature

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