NCV8570(2009) データシートの表示（PDF） - ON Semiconductor

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NCV8570
(Rev.:2009)

200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

ON Semiconductor 

NCV8570

ELECTRICAL CHARACTERISTICS

(Vin = Vout + 0.5 V, VCE = 1.2 V, Cin = 0.1 mF, Cout = 1 mF, Cnoise = 10 nF, TA = −40°C to 85°C, unless otherwise specified (Note 2))

Characteristic

Test Conditions

Symbol Min

Typ

Max

Unit

TIMING

Turn−on Time

Iout = 150 mA

Cnoise = 10 nF

ton

Cnoise = 100 nF

−

0.4

−

ms

−

4

−

Turn−off Time

Cnoise = 10 nF/100 nF

Iout = 1 mA

toff

Iout = 10 mA

−

800

−

ms

−

200

−

2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at

TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

3. Contact factory for other voltage options.

4. Guaranteed by design and characterization.

5. Characterized when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 1 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V.

6. Measured when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 0.5 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V.

7. Expected to disable device when CE pin is floating.

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