NE33284A-T1A データシートの表示（PDF） - NEC => Renesas Technology
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NE33284A-T1A Datasheet PDF : 10 Pages
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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 µm
ORDERING INFORMATION
SUPPLYING
PART NUMBER
LEAD LENGTH
FORM
NE33284A-SL
STICK
L = 1.7 mm MIN.
NE33284A-T1
NE33284A-T1A
Tape & reel L = 1.0 ±0.2 mm
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
U
2
4
L
L
3
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –65 to +150 ˚ C
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
©
1995
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