OD-850L(2013) データシートの表示（PDF） - OptoDiode Corp
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OD-850L Datasheet PDF : 2 Pages
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HIGH-POWER GaAlAs IR EMITTERS
OD-850L
FEATURES
• High optical output
• 850nm peak emission
• Hermetically sealed TO-46 package
• Medium emission angle for best coverage/power density
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Rise Time
Fall Time
IF = 100mA
25
IF = 20mA
IF = 20mA
IF = 20mA
IF = 100mA
IR = 10μA
5
IFP = 50mA
IFP = 50mA
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)1
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
TYP
MAX
UNITS
35
mW
850
nm
40
nm
35
Deg
1.6
2
Volts
30
Volts
20
nsec
20
nsec
200mW
100mA
300mA
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-40°C to 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
Revision February 26, 2013
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
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