EN29F800B-45T データシートの表示（PDF） - Eon Silicon Solution Inc.

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EN29F800B-45T

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only

Eon Silicon Solution Inc. 

Table 7. DC Characteristics

(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)

EN29F800

Symbol

Parameter

Test Conditions

ILI

ILO

ICC1

ICC2

ICC3

VIL

VIH

VOL

VOH

VID

IID

VLKO

Input Leakage Current

Output Leakage Current

Supply Current (read) TTL

(read) CMOS Byte

(read) CMOS Word

Supply Current (Standby - TTL)

(Standby - CMOS) (1)

Supply Current (Program or Erase)

Input Low Voltage

0V≤ VIN ≤ Vcc

0V≤ VOUT ≤ Vcc

CE# = VIL; OE# = VIH;

f = 5MHz

CE# = VIH

BYTE# = RESET# =

CE# = Vcc ± 0.2V

Byte program, Sector or

Chip Erase in progress

Input High Voltage

Output Low Voltage

Output High Voltage TTL

Output High Voltage CMOS

A9 Voltage (Electronic Signature)

A9 Current (Electronic Signature)

Supply voltage (Erase and

Program lock-out)

IOL = 2 mA

IOH = -2.5 mA

IOH = -100 µA

A9 = VID

Min

-0.5

2

2.4

Vcc -

0.4V

10.5

3.2

Typ Max Unit

±5

µA

±5

µA

19

30

mA

20

40

mA

28

50

mA

0.4

1.0

mA

0.3

5.0

µA

30

60

mA

0.8

V

Vcc ±

0.5

V

0.45

V

V

V

11.5

V

100

µA

4.2

V

Notes:

(1) BYTE# and RESET# pin input buffers are always enabled so that they draw power if not at full CMOS

supply voltages

4800 Great America Parkway, Suite 202

21

Santa Clara, CA 95054

Rev. E, Issue Date: 2001/07/05

Tel: 408-235-8680

Fax: 408-235-8685

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