PBYR1020D データシートの表示（PDF） - Philips Electronics
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PBYR1020D Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1025D series
Forward dissipation, PF (W)
15
Vo = 0.32 V
Rs = 0.009 Ohms
10
0.2
0.1
PBYL1625 Tmb(max) / C
120
D = 1.0
0.5
130
5
I
tp
D=
tp
T
140
T
t
0
150
0
5
10
15
20
25
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
1A IR / A
100mA
10mA
1mA
100uA
Tj = 150 C
125
100
75
50
25
PBYR2025CT
10uA
0
5
10
15
20
25
VR / V
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Forward dissipation, PF (W) PBYL1625
12
Vo = 0.32 V
Rs = 0.009 Ohms
10
2.2
8
2.8
4
6
Tmb(max) / C
126
a = 1.57
130
1.9
134
138
4
142
2
146
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
10000 Cd / pF
PBYR2025CT
1000
100
1
Fig.5.
10
100
VR / V
Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
IF / A
30
25
Tj = 25 C
Tj = 125 C
20
PBYR2025CT
typ
max
15
10
5
0
0
Fig.3.
0.2
0.4
0.6
0.8
1
VF / V
Typical and maximum forward characteristic
IF = f(VF); parameter Tj
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYL1625
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
April 1998
3
Rev 1.000
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