PBYR320CTD データシートの表示（PDF） - Philips Electronics
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PBYR320CTD Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR325CTD series
1 Forward dissipation, PF (W)
Vo = 0.3 V
Rs = 0.067 Ohms
0.8
PBYR325CTD Tmb(max) / C
145
D = 1.0
0.5
146
0.2
0.6
0.1
147
0.4
148
I
tp
D
=
tp
T
0.2
149
T
t
0
150
0
0.5
1
1.5
2
2.5
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation per diode
PF = f(IF(AV)); square current waveform where
IF(AV) =IF(RMS) x √D.
0.8
Forward dissipation, PF (W)
Vo = 0.3 V
PBYR325CTD
Tmb(max) / C
a = 1.57 146
0.7 Rs = 0.067 ohms
1.9
2.2
0.6
2.8
147
0.5
4
0.4
148
0.3
0.2
149
0.1
0
150
0
0.5
1
1.5
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation per diode
PF = f(IF(AV)); sinusoidal current waveform where
a = form factor = IF(RMS) / IF(AV).
6 Forward current, IF (A)
Tj = 25 C
5 Tj = 125 C
typ
4
PBYR325CTD
3
max
2
1
0
0
Fig.3.
0.2
0.4
0.6
0.8
1
Forward voltage, VR (V)
Typical and maximum forward characteristic
per diode IF = f(VF); parameter Tj
100mA Reverse current, IR (A)
150 C
10mA
125 C
1mA 100 C
75 C
100uA
50 C
10uA Tj = 25 C
PBYR325CTD
1uA
0
5
10
15
20
25
Reverse voltage, VR (V)
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
1000 Junction capacitance, Cd (pF)
PBYR325CTD
100
10
1
10
100
Reverse voltage, VR (V)
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYR325CTD
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
February 1998
3
Rev 1.000
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