PC28F00AG18XX データシートの表示（PDF） - Micron Technology

部品番号

コンポーネント説明

メーカー

PC28F00AG18XX

StrataFlash Embedded Memory

Micron Technology 

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

Revision History

Revision History

Rev. F – 8/11

Rev. E – 8/11

Rev. D – 5/11

Rev. C – 2/11

Rev. B – 12/10

Rev. A – 12/10

• Removed (45nm, 65nm, Litho) from the Device ID Codes table.

• Changed balls H2 and H6 from VSS to VSSQ in Figure 2.

• Corrected A/D MUX symbol from A[MAX:16] to A[MAX:17] in the Signal Descriptions

table.

• Added the Address Mapping for Address/ Data Mux Mode table.

• Updated the Read Configuration Register Bit Definitions table.

• CFI ID string table, hex offset 13h: Changed address 13 hex code to 00; changed ad-

dress 14 hex code to 02.

• Table: DC Voltage Characteristics and Operating Conditions: Changed V IL Max to 0.45;

changed VIH Min to VCCQ - 0.45.

• Revised for reuse.

• Added AAD-mux description.

• Made miscellaneous text edits and formatting improvements.

• Initial release.

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www.micron.com/productsupport Customer Comment Line: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

PDF: 09005aef8448483a

128_256_512_65nm_g18.pdf - Rev. F 8/11 EN

118

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2011 Micron Technology, Inc. All rights reserved.

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