PCD3354AH データシートの表示（PDF） - Philips Electronics

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PCD3354AH

8-bit microcontrollers with DTMF generator and 256 bytes EEPROM

Philips Electronics 

Philips Semiconductors

8-bit microcontrollers with DTMF

generator and 256 bytes EEPROM

Product specification

PCA3354C; PCD3354A

7.2 EEPROM latches

The four EEPROM latches (EEPROM Latch 0 to 3; Fig.4)

cannot be read by user software. Due to their construction,

the latches can only be preset, but not cleared. Successive

write operations through DATR to the EEPROM latches

actually perform a logical OR with the previously stored

data in EEPROM. The EEPROM latches are reset at the

conclusion of any EEPROM cycle.

7.3 EEPROM flags

The four EEPROM flags (F0 to F3; Fig.4) cannot be

directly accessed by user software. An EEPROM flag is

set as a side-effect when the corresponding EEPROM

latch is written through DATR. The EEPROM flags are

reset at the conclusion of any EEPROM cycle.

7.4 EEPROM macros

The instruction sequence used in an EEPROM access

should be treated as an indivisible entity. Erroneous

programs result if ADDR, DATR, RELR or EPCR are

inadvertently changed during an EEPROM cycle or its

setup. Special care should be taken if the program may

asynchronously divert due to an interrupt. A new access to

the EEPROM may only be initiated when no write, erase or

erase/write cycles are in progress. This can be verified by

reading bit EWP (register EPCR).

For write, erase and erase/write cycles, it is assumed that

the Timer 2 Reload Register (RELR) has been loaded with

the appropriate value for a 5 ms delay, which depends on

fxtal (see Table 23). The end of a write, erase or erase/write

cycle will be signalled by a cleared EWP and by a Timer 2

interrupt provided that ET2I = 1 and that the derivative

interrupt is enabled.

7.5 EEPROM access

One read, one write, one erase/write and one erase

access are defined by bits EWP and MC1 to MC3 in the

EPCR register; see Table 10.

Read byte retrieves the EEPROM byte addressed by

ADDR when DATR is read. Read cycles are

instantaneous.

Write and erase cycles take 5 ms, however. Erase/write is

a combination of an erase and a subsequent write cycle,

consequently taking 10 ms.

As their names imply, write page, erase page and

erase/write page are applied to a whole EEPROM page.

Therefore, bits AD0 and AD1 of register ADDR (see

Table 13), defining the byte location within an EEPROM

page, are irrelevant during write and erase cycles.

However, write and erase cycles need not affect all bytes

of the page. The EEPROM flags F0 to F3 (see Fig.4)

determine which bytes within the EEPROM page are

affected by the erase and/or write cycles. A byte whose

corresponding EEPROM flag is zero remains unchanged.

With erase page, a byte is erased if its corresponding

EEPROM flag is set. With write page, data in EEPROM

latches 0 to 3 (Fig.4) are ORed to the individual page bytes

if and only if the corresponding EEPROM flags are set.

In an erase/write cycle, F0 to F3 select which page bytes

are erased and ORed with the corresponding EEPROM

latches.

ORing, in this event, means that the EEPROM latches are

copied to the selected page bytes.

The described page-wise organization of erase and write

cycles allows up to four bytes to be individually erased or

written within 5 ms. This advantage necessitates a

preparation step, called page setup, before the actual

erase and/or write cycle can be executed.

Page setup controls EEPROM latches and EEPROM

flags. This will be described in the Sections 7.5.1 to 7.5.5.

7.5.1 PAGE SETUP

Page setup is a preparation step required before write

page, erase page and erase/write page cycles.

As previously described, these page operations include

single-byte write, erase and erase/write as a special event.

EEPROM flags F0 to F3 determine which page bytes will

be affected by the mentioned page operations. EEPROM

Latch 0 to 3 must be preset through DATR to specify the

write cycle data to EEPROM and to set the EEPROM flags

as a side-effect.

Obviously, the actual preset value of the EEPROM latches

is irrelevant for erase page. Preset of one, two, three or all

four EEPROM latches and the corresponding EEPROM

flags can be performed by repeatedly defining ADDR and

writing to DATR (see Table 17).

If more than one EEPROM latch must be preset, the

subcounter consisting of AD0 and AD1 can be induced to

auto-increment after every write to DATR, thus stepping

through all EEPROM latches. For this purpose, increment

mode (Table 12) must be selected. Auto-incrementing

stops at EEPROM Latch 3. It is not mandatory to start at

EEPROM Latch 0 as in shown in Table 18.

Note that AD2 to AD6 are irrelevant during page setup.

They will usually specify the intended EEPROM page,

anticipating the subsequent page cycle.

1996 Dec 18

15

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