PE42556
Product Specification
Table 6. Mechanical Specifications
Parameter
Die Size, Drawn (x,y)
Minimum
Typical
996 x 1896
Maximum
Die Size, Singulated (x,y)
1080 x 1980 1100 x 2000 1150 x 2050
Wafer Thickness
Wafer Size
Ball Pitch
Ball Height
Ball Diameter
UBM Diameter
180
200
220
150
400
72.25
85
97.75
110
85
90
95
Units
μm
μm
µm
mm
μm
μm
μm
μm
Test Conditions
As drawn
Including excess sapphire, max. tolerance
= -20/+50 μm
Typical
RoHS compliant lead-free solder balls
Solder ball composition: 95.5%Sn/3.5%Ag/ 1.0%Cu
Table 7. Bump Coordinates
Bump # Bump Name
Bump Center (µm)
X
Y
1
VSS
400
850
2
DGND
400
450
3
GND4
400
50
4
RF2
400
-350
5
GND3
400
-750
6
RFC
0
-750
7
GND1
-400
-750
8
RF1
-400
-350
9
GND2
-400
50
10
LS
-400
450
11
VDD
-400
850
12
CTRL
0
850
13
DGND
0
450
14
DGND
0
50
All bump locations originate from the die center and refer to the
center of the bump.
Ball pitch is 400 µm.
Figure 18. Pad Layout (Bumps Up)
2000 μm
-20/+50 μm
Vdd
11
LS
10
GND
9
RF1
8
GND
7
CTRL
12
D-GND
13
DGND
14
RFC
6
Vss
1
D-GND
2
GND
3
RF2
4
GND
5
1100 μm
-20/+50 μm
Singulated Die size: 1.1 X 2.0 mm (400 µm ball pitch)
©2009-2012 Peregrine Semiconductor Corp. All rights reserved.
Page 8 of 10
Document No. 70-0289-06 │ UltraCMOS® RFIC Solutions