E28F008BV-B70 データシートの表示（PDF） - Intel
部品番号
コンポーネント説明
メーカー
E28F008BV-B70 Datasheet PDF : 58 Pages
| |||
8-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E
4.13 AC Characteristics—WE# Controlled Write Operations(1)—
Extended Temperature (Continued)
Prod TBE-120
TBV-90
TBV-90
TBE-120
Sym
Parameter
VCC 2.7V–3.6V(9) 3.3±0.3V(9) 5V±10%(10) Unit
Load
50 pF
50 pF
100 pF
Notes Min Max Min Max Min Max
tQVVL
VPP Hold from Valid SRD
5,8
0
0
0
ns
tQVPH
RP# VHH Hold from Valid SRD
6,8
0
0
0
ns
tPHBR
Boot-Block Lock Delay
7,8
200
200
100 ns
NOTES:
1. Read timing characteristics during program and erase operations are the same as during read-only operations. Refer to AC
Characteristics during read mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled internally
which includes verify and margining operations.
3. Refer to command definition table for valid AIN. (Table 7)
4. Refer to command definition table for valid DIN. (Table 7)
5. Program/erase durations are measured to valid SRD data (successful operation, SR.7 = 1)
6. For boot block program/erase, RP# should be held at VHH or WP# should be held at VIH until operation completes
successfully.
7. Time tPHBR is required for successful locking of the boot block.
8. Sampled, but not 100% tested.
9. See Test Configuration (Figure 19), 2.7 V–3.6 V and 3.3 ± 0.3 V Standard Test component values.
10. See Test Configuration (Figure 19), 5 V Standard Test component values.
54
SEE NEW DESIGN RECOMMENDATIONS
Share Link: 