MDS800 データシートの表示（PDF） - GHz Technology
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MDS800 Datasheet PDF : 1 Pages
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R.3.110599
MDS800
800 Watts, 50 Volts, Pulsed
Avionics 1090 MHz
PRELIMINARY
GENERAL DESCRIPTION
The MDS800 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1090 MHz, with the pulse
width and duty required for MODE-S applications. The device has gold thin-
film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability. Low
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25°C
1750 Watts
CASE OUTLINE
55ST Style 1
Maximum Voltage and Current
Collector to Base Voltage (BVCES)
Emitter to Base Voltage (BVEBO)
Collector Current (Ic)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
60 V
3.5 V
60.0 Amps
-65 to +200 °C
+230 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
Pout
Pin
Pg
ηc
Pd
RL
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Power Droop
Return Loss
Load Mismatch Tolerance
TEST CONDITIONS
F = 1090 MHz
VCC = 50 Volts
PW = 128 µsec
LTDF = 2%
F = 1090 MHz
FUNCTIONAL CHARACTERISTICS @ 25°C
BVCES
BVEBO*
hFE
θjc2
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC – Current Gain
Thermal Resistance
Note 1: At rated output power and pulse conditions
Note 2: Burst is 0.5µs and 0.5µs off for 128µs
* : Not measureable due to internal EB returns
Ie = 30 mA
Ie = 50mA
Vce = 5V, Ic = 5A
MIN TYP MAX UNITS
800
W
110 W
8.5
dB
40
%
0.5
dB
-12 dB
4:1
65
V
3.5
V
20
100
0.12 °C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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