HN58C65FP-25 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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HN58C65FP-25

8192-word × 8-bit Electrically Erasable and Programmable CMOS ROM

Hitachi -> Renesas Electronics 

HN58C65 Series

Data Polling Timing Waveform

Address

An

An

An

CE

WE

OE

I/O7

tBL

Din X

tOE

Dout X

tWC

tOES

tDW

Dout X

Functional Description

Automatic Page Write

Page-mode write feature allows 1 to 32 bytes of data to be written into the EEPROM in a single write cycle.

Following the initial byte cycle, an additional 1 to 31 bytes can be written in the same manner. Each

additional byte load cycle must be started within 30 µs of the preceding rising edge of the WE. When CE or

WE is high for 100 µs after data input, the EEPROM enters write mode automatically and the input data are

written into the EEPROM.

Data Polling

Data polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a

write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the EEPROM

is performing a write operation.

RDY/Busy Signal

RDY/Busy signal also allows the status of the EEPROM to be determined. The RDY/Busy signal has high

impedance, except in write cycle and is lowered to VOL after the first write signal. At the end of a write cycle,

the RDY/Busy signal changes state to high impedance.

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