RJH60F7BDPQ-A0 データシートの表示（PDF） - Renesas Electronics

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RJH60F7BDPQ-A0

600V - 50A - IGBT High Speed Power Switching

Renesas Electronics 

Preliminary Datasheet

RJH60F7BDPQ-A0

600V - 50A - IGBT

High Speed Power Switching

R07DS0633EJ0100

Rev.1.00

Feb 17, 2012

Features

 Low collector to emitter saturation voltage

VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

 Built in fast recovery diode in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)

Outline

RENESAS Package code: PRSS0003ZH-A

(Package name: TO-247A)

C

4

123

1. Gate

2. Collector

G

3. Emitter

4. Collector

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward peak current

Collector dissipation

Junction to case thermal impedance (IGBT)

Junction to case thermal impedance (Diode)

Junction temperature

Storage temperature

Notes: 1. Pulse width limited by safe operating area.

2. PW  5 s, duty cycle  1%

Symbol

VCES

VGES

IC

IC

ic(peak) Note1

iDF(peak) Note2

PC

j-c

j-cd

Tj

Tstg

Ratings

600

±30

90

50

180

100

328.9

0.38

1.1

150

–55 to +150

(Tc = 25°C)

Unit

V

V

A

A

A

A

W

°C/W

°C/W

°C

°C

R07DS0633EJ0100 Rev.1.00

Feb 17, 2012

Page 1 of 8

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