RJH60F7BDPQ-A0 データシートの表示（PDF） - Renesas Electronics
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RJH60F7BDPQ-A0 Datasheet PDF : 9 Pages
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RJH60F7BDPQ-A0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
Gate to emitter leak current
IGES
Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Switching time
td(on)
tr
td(off)
tf
C-E diode forward voltage
VECF
C-E diode reverse recovery time
trr
Notes: 3. Pulse test
Typ
1.35
1.6
4700
198
83
63
81
142
74
2.5
25
Preliminary
Max
100
±1
8
1.75
3.0
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 50 A, VGE = 15V Note3
IC = 90 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
IF = 30 A Note3
IF = 30 A
diF/dt = 100 A/s
R07DS0633EJ0100 Rev.1.00
Feb 17, 2012
Page 2 of 8
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