RJH60F7BDPQ-A0 データシートの表示（PDF） - Renesas Electronics
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RJH60F7BDPQ-A0 Datasheet PDF : 9 Pages
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RJH60F7BDPQ-A0
Switching Characteristics (Typical) (1)
1000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
tf
td(off)
100
td(on)
tr
tr includes the diode recovery
10
1
10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
VCC = 400 V, VGE = 15 V
IC = 30 A, Ta = 150 °C
tr includes the diode recovery
1000
td(off)
100
tr
tf
td(on)
10
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
tr
td(off)
100
tf
td(on)
tr includes the diode recovery
10
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
Preliminary
Switching Characteristics (Typical) (2)
10000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 25°C
1000
Eoff
Eon
100
Eon includes the diode recovery
10
1
10
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
Eoff
1000
Eon
VCC = 400 V, VGE = 15 V
IC = 30 A, Ta = 150 °C
Eon includes the diode recovery
100
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon
1000
Eoff
Eon includes the diode recovery
100
25 50 75 100 125 150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0633EJ0100 Rev.1.00
Feb 17, 2012
Page 5 of 8
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