RMBA09501A データシートの表示（PDF） - Fairchild Semiconductor

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RMBA09501A

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

Fairchild Semiconductor 

Electrical Characteristics2

Parameter

Frequency Ranges

Gain (Small Signal)

Gain Variation:

Over Frequency Range

Over Temperature Range

Noise Figure

Output Power @ CDMA3

OIP34

Idd @ 33dBm Pout – 7V

PAE @ 33dBm Pout

Input VSWR (50Ω)

Drain Voltage (VDD)

Gate Voltages (VG1, VG2)5

Quiescent Currents (IDQ1, IDQ2)5

Thermal Resistance (Channel to Case) Rjc

Min

Typ

Max

869

894

30

35

±1.5

±2.5

6

33

43

45

1.0

28.5

2:1

7.0

-2

-0.25

150, 400

11

Units

MHz

dB

dB

dB

dB

dBm

dBm

A

%

V

V

mA

°C/W

Notes:

2. VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 50Ω.

3. 9 Channel Forward Link QPSK Source; 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel

at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc.

4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25MHz at bandcenter.

4. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve IDQTOTAL = 550mA can be used with

nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been optimized for CDMA operation. IDQ1 and IDQ2 (or IDQTOTAL) can be adjusted to

optimize the linearity of the amplifier for other modulation systems.

The device requires external input and output matching to 50Ω as shown in Figure 3 and the Parts List.

©2003 Fairchild Semiconductor Corporation

RMBA09501A Rev. C

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