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RMPA0959

CDMA and CDMA2000-1X PowerEdge™ Power Amplifier Module

Fairchild Semiconductor 

March 2006

RMPA0959

CDMA and CDMA2000-1X PowerEdge™

Power Amplifier Module

Features

■ Single positive-supply operation with low power and shut-

down modes

■ 39% CDMA efficiency at +28dBm average output power

■ 53% AMPS mode efficiency at +31dBm output power

■ Lead-free RoHS compliant 4 x 4 x 1.5mm leadless

■ Internally matched to 50Ω and DC blocked RF input/output

■ Meets CDMA2000-1XRTT performance requirements

General Description

The RMPA0959 power amplifier module (PAM) is designed for

cellular band AMPS, CDMA and CDMA2000-1X applications.

The 2 stage PAM is internally matched to 50Ω to minimize the

use of external components and features a low-power mode to

reduce standby current and DC power consumption during peak

phone usage. High power-added efficiency and excellent linear-

ity are achieved using our Heterojunction Bipolar Transistor

(HBT) process.

Device

Functional Block Diagram

Vcc1

(5)

PA MODULE

COLLECTOR

BIAS 1

GND

(3, 7, 9,10,11)

RF IN

(4)

Vref

(1)

INPUT

MATCHING

NETWORK

INTERSTAGE

MATCH

INPUT

STAGE MMIC

OUTPUT

STAGE

INPUT STAGE

BIAS

OUTPUT STAGE

BIAS

OUTPUT

MATCHING

NETWORK

RF OUT

(8)

VCC=3.4V (nom)

VREF=2.85V (nom)

824-849 MHz

50Ω I/O

BIAS CONTROL

COLLECTOR

BIAS 2

Vcc2

(6)

Vmode (2)

©2006 Fairchild Semiconductor Corporation

1

RMPA0959 Rev. F

www.fairchildsemi.com

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