DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PTF10009 データシートの表示(PDF) - Ericsson

部品番号
コンポーネント説明
メーカー
PTF10009 Datasheet PDF : 6 Pages
1 2 3 4 5 6
PTF 10009
e
Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)
Characteristic (per side) Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Drain-Source Leakage Current VDS = 28 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
Forward Transconductance
VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
3.0
Typ
2.8
Max
1.0
5.0
Units
Volts
mA
Volts
Siemens
Dynamic Characteristics
Characteristic (per side)
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz)
Drain Efficiency
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol Min
Ciss
Coss
Crss
Typ Max Units
90
pF
36
pF
1.9
pF
Symbol Min
Gps
12.0
h
47
Y
Typ Max Units
13.0
dB
50
%
5:1
Impedance Data (data shown for fixed-tuned broadband circuit)
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA)
Z Source
D Z Load
G
S
G
Frequency
MHz
860
900
960
1000
Z Source W
R
jX
1.76
-0.78
1.80
-0.05
1.58
0.69
1.39
1.35
D
Z Load W
R
jX
5.00
-1.50
4.80
-0.78
4.24
0.36
3.95
1.41
2
Z0 = 50 W

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]