RQA0008RXDQS(2006) データシートの表示（PDF） - Renesas Electronics

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RQA0008RXDQS
(Rev.:2006)

Silicon N-Channel MOS FET

Renesas Electronics 

RQA0008RXDQS

Silicon N-Channel MOS FET

Features

• High Output Power, High Gain, High Efficiency

Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)

• Compact package capable of surface mounting

Outline

RENESAS Package code: PLZZ0004CA-A

(Package Name : UPAK R )

3

1

2

3

1

4

REJ03G1326-0100

Rev.1.00

Oct 16, 2006

1. Gate

2. Source

3. Drain

4. Source

Note: Marking is “RX”.

2, 4

*UPAK is a trademark of Renesas Technology Corp.

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Channel dissipation

Channel temperature

Storage temperature

Note1: Value at Tc = 25°C

Symbol

VDSS

VGSS

ID

Pchnote1

Tch

Tstg

Ratings

16

±5

2.4

10

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

W

°C

°C

This Device is sensitive to Electro Static Discharge. An Adequate careful handling procedure is requested.

Rev.1.00 Oct 16, 2006 page 1 of 12

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