SZM-2166Z-EVB2 データシートの表示（PDF） - Sirenza Microdevices => RFMD
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SZM-2166Z-EVB2 Datasheet PDF : 16 Pages
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Preliminary
SZM-2166Z 2.3-2.7GHz 2W Power Amp
Typical Performance with appropriate app circuit(Vcc=6V, ***Icq=655mA, * 802.11g 54Mb/s 64QAM)
Parameter
Units
**2.3GHz **2.4GHz ***2.5GHz ***2.6GHz ***2.7GHz
Gain @ Pout=26dBm
dB
37.5
37.5
37.5
37
35
P1dB
dBm
34
34
35
35
35
EVM% at 27dBm Output Power*
%
2.3
2.9
1.7
1.7
2.5
Current @ Pout 2.5% EVM*
mA
768
779
900
889
878
Input Return Loss
dB
23
21
14
14
14
Output Return Loss
dB
14
11
20
25
18
**Measured with 2.3-2.4GHz Application circuit. See page 11 for details.
***Measured with 2.5-2.7GHz Application circuit. See page 13 for details
Absolute Maximum Ratings
Parameters
Value
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
*****Device Voltage (VD)
Power Dissipation
1500
mA
500
mA
150
mA
9.0
V
6
W
Operating Lead Temperature (TL)
****Max CW RF output Power for 50 ohm
continuous long term operation
-40 to +85
30
ºC
dBm
Max CW RF Input Power for 50 ohm out-
put load
26
dBm
Max CW RF Input Power for 10:1 VSWR
RF out load
5
dBm
Max Storage Temperature
+150
ºC
Operating Junction Temperature (TJ)
ESD Human Body Model
+150
ºC
Class 1B
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IcqVcc < (TJ - TL) / RTH’ j-l
Note: Icq in this equation is for the stage with the highest current
**** With specified application circuit.
*****No RF Drive
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105683 Rev B
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