S-8243AACFT-TB-G データシートの表示（PDF） - Seiko Instruments Inc
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S-8243AACFT-TB-G Datasheet PDF : 35 Pages
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BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL CELL PACK
S-8243A/B Series
Rev.3.1_00
Table 7 (2 / 2)
Item
Symbol
Remarks
Min.
Typ.
Max. Unit Test circuit
INPUT CURRENT
Current consumption at not
monitoring VBATOUT
IOPE
V1 = V2 = V3 = V4 = 3.5 V, VMP = VDD
−
65
120
μA
1
Current consumption at power down IPDN V1 = V2 = V3 = V4 = 1.5 V, VMP = VSS
−
−
0.1
μA
1
Current for VCn at not monitoring
VBATOUT (n = 2, 3)
IVCnN
V1 = V2 = V3 = V4 = 3.5 V
−0.3
0
0.3
μA
3
Current for VC1 at monitoring of
VBATOUT
IVC1
V1 = V2 = V3 = V4 = 3.5 V
−
3.2
10.4
μA
3
Current for VC2 at monitoring of
VBATOUT
IVC2
V1 = V2 = V3 = V4 = 3.5 V
−
2.0
7.2
μA
3
Current for VC3 at monitoring of
VBATOUT
IVC3
V1 = V2 = V3 = V4 = 3.5 V, VCTL1 = 0 V
−
1.0
4.0
μA
3
Current for CTL1 at Low
ICTL1L V1 = V2 = V3 = V4 = 3.5 V, VCTL1 = 0 V
−0.4
−0.2
−
μA
5
Current for CTLn at High
n = 2, 3, 4
ICTLnH
VCTLn = VOUT
−
2.5
5
μA
9
Current for CTLn at Low
n = 2, 3, 4
ICTLnL
VCTLn = 0 V
−5
−2.5
−
μA
9
OUTPUT CURRENT
Leak current COP
Sink current COP
Source current DOP
Sink current DOP
Source current VBATOUT
Sink current VBATOUT
ICOH
ICOL
IDOH
IDOL
IVBATH
IVBATL
VCOP = 24 V
VCOP = VSS+0.5 V
VDOP = VDD−0.5 V
VDOP = VSS+0.5 V
VBATOUT = VDD−0.5 V
VBATOUT = VSS+0.5 V
−
−
0.1
μA
9
10
−
−
μA
9
10
−
−
μA
9
10
−
−
μA
9
100
−
−
μA
9
100
−
−
μA
9
Applied to S-8243BAEFT, S-8243BAFFT, S-8243BAHFT
Item
Symbol
DELAY TIME
Overcharge detection delay time tCU
Overdischarge detection delay time tDL
Overcurrent detection delay time 1 tlOV1
Overcurrent detection delay time 2 tlOV2
Overcurrent detection delay time 3 tlOV3
CCT = 0.1 μF
CDT = 0.1 μF
CDT = 0.1 μF
Conditions
−
−
Min.
Typ.
Max. Unit Test circuit
0.5
1.0
1.5
s
5
50
100
150
ms
5
5
10
15
ms
5
1.5
2.5
4.0
ms
4
100
300
600
μs
4
Applied to S-8243BADFT
Item
Symbol
Conditions
Min.
Typ.
Max. Unit Test circuit
DELAY TIME
Overcharge detection delay time tCU
CCT = 0.1 μF
0.5
1.0
1.5
s
5
Overdischarge detection delay time tDL
CDT = 0.1 μF
55.5
111
222
ms
5
Overcurrent detection delay time 1 tlOV1 CDT = 0.1 μF
3.31
6.62
13.2 ms
5
Overcurrent detection delay time 2 tlOV2
−
1.5
2.5
4.0
ms
4
Overcurrent detection delay time 3 tlOV3
−
100
300
600
μs
4
*1. Temperature coefficient for detection and release voltage is applied to overcharge detection voltage n, overcharge release voltage n, overdischarge
detection voltage n, and overdischarge release voltage n.
*2. Temperature coefficient for overcurrent detection voltage is applied to over current detection voltage 1 and 2.
*3. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in
production.
10
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