S40D100 データシートの表示（PDF） - Mospec Semiconductor
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S40D100 Datasheet PDF : 2 Pages
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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊125℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
S40D90 Thru S40D100
SCHOTTKY BARRIER
RECTIFIERS
40 AMPERES
90-100 VOLTS
TO-3P
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
RMS Reverse Voltage
VR(RMS)
Average Rectifier Forward Current
Total Device (Rated VR),TC=100℃
IF(AV)
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
IFSM
halfware, single phase, 60Hz)
Operating and Storage Junction
Temperature Range
TJ , TSTG
S40D90
90
S40D100
100
63
70
20
40
40
300
-65 to +125
Unit
V
V
A
A
A
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Symbol
S40D90
S40D100
Unit
Maximum Instantaneous Forward Voltage
( IF =20 Amp TC = 25℃)
VF
( IF =20 Amp TC = 125℃)
0.85
0.75
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
IR
( Rated DC Voltage, TC = 125℃)
2.0
mA
80
DIM MILLIMETERS
MIN MAX
A 20.63 22.38
B 15.38 16.20
C
1.90 2.70
D
5.10 6.10
E 14.81 15.22
F 11.72 12.84
G 4.20 4.50
H
1.82 2.46
I
2.92 3.23
J
0.89 1.53
K
5.26 5.66
L 18.50 21.50
M 4.68 5.36
N
2.40 2.80
O 3.25 3.65
P
0.55 0.70
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