SI3233 データシートの表示（PDF） - Silicon Laboratories

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SI3233

PROSLIC® PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION

Silicon Laboratories 

Si3233

Table 4. Linefeed Characteristics

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for F-Grade, –40 to 85°C for G-Grade)

Parameter

Symbol

Test Condition

Min Typ Max Unit

Loop Resistance Range

RLOOP

See note.*

0

—

160

Ω

DC Loop Current Accuracy

ILIM = 29 mA, ETBA = 4 mA

–10

—

10

%

DC Open Circuit Voltage

Accuracy

Active Mode; VOC = 48 V,

–4

—

4

V

VTIP – VRING

DC Differential Output

RDO

Resistance

ILOOP < ILIM

—

160

—

Ω

DC Open Circuit Voltage—

VOCTO IRING<ILIM; VRING wrt ground

–4

—

4

V

Ground Start

VOC = 48 V

DC Output Resistance—

RROTO

IRING<ILIM; RING to ground

—

160

—

Ω

Ground Start

DC Output Resistance—

Ground Start

RTOTO

TIP to ground

150

—

—

kΩ

Loop Closure/Ring Ground

Detect Threshold Accuracy

ITHR = 11.43 mA

–20

—

20

%

Ring Trip Threshold

Accuracy

Ring Trip Response Time

ITHR = 40.64 mA

–10

—

10

%

User Programmable Register 70 —

—

—

and Indirect Register 23

Ring Amplitude

Ring DC Offset

Trapezoidal Ring Crest

Factor Accuracy

VTR

5 REN load; sine wave;

44

—

RLOOP = 160 Ω, VBAT = –75 V

ROS

Programmable in Indirect

0

—

Register 6

Crest factor = 1.3

–.05

—

—

Vrms

—

V

.05

Sinusoidal Ring Crest

RCF

Factor

1.35

—

1.45

Ringing Frequency Accuracy

Ringing Cadence Accuracy

Calibration Time

f = 20 Hz

–1

—

1

%

Accuracy of ON/OFF Times –50

—

50

ms

↑CAL to ↓CAL Bit

—

—

600

ms

Power Alarm Threshold

Accuracy

At Power Threshold = 300 mW –25

—

25

%

*Note: DC resistance round trip; 160 Ω corresponds to 2 kft 26 gauge AWG.

Preliminary Rev. 0.5

7

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