IRFP21N60L(2011) データシートの表示（PDF） - Vishay Semiconductors

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IRFP21N60L
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRFP21N60L, SiHFP21N60L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1000

100

10

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

1

0.1

0.01

0.001

0.1

5.5V

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

1000

Fig. 1 - Typical Output Characteristics

1000

100

TJ = 150°C

10

1

TJ = 25°C

0.1

0.01

4

VDS = 50V

20µs PULSE WIDTH

6

8

10

12

14

16

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

100

VGS

TOP

15V

12V

10V

8.0V

10

7.0V

6.5V

6.0V

BOTTOM 5.5V

1

5.5V

0.1

0.01

0.1

20µs PULSE WIDTH

Tj = 150°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

3.0

ID = 21A

2.5 VGS = 10V

2.0

1.5

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91206

S11-0446-Rev. C, 14-Mar-11

www.vishay.com

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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