Avalanche Energy EAS = f (Tj)
parameter: ID = 30 A, VDD = 25 V
RGS = 25 Ω
150
mJ
100
Typ. gate charge
VGS = f (QGate)
parameter: ID puls = 30 A
SPD28N03L
16
V
SPD28N03L
12
10
75
8
0,2 VDS max
0,8 VDS max
6
50
4
25
2
0
20 40 60 80 100 120 140 °C 180
Tj
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
0
0 5 10 15 20 25 30 35 40 nC 50
QGate
SPD28N03L
37
V
35
34
33
32
31
30
29
28
27-60
-20
20
Semiconductor Group
60 100 140 °C 200
Tj
8