SST36VF1601 データシートの表示（PDF） - Silicon Storage Technology

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SST36VF1601

16 Megabit Concurrent SuperFlash

Silicon Storage Technology 

TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

TPU-READ

TPU-WRITE

Power-up to Read Operation

Power-up to Write Operation

16 Megabit Concurrent SuperFlash

SST36VF1601 / SST36VF1602

Advance Information

Minimum

100

100

Units

µs

µs

373 PGM T9.1

TABLE 10: CAPACITANCE (Ta = 25 °C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

Maximum

12 pF

6 pF

373 PGM T10.0

TABLE 11: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification Units

Test Method

NEND1

TDR1

VZAP_HBM1

VZAP_MM1

Endurance - Flash

Data Retention

ESD Susceptibility

Human Body Model

ESD Susceptibility

Machine Model

10,000

100

2000

200

Cycles

Years

Volts

Volts

JEDEC Standard A117

JEDEC Standard A103

JEDEC Standard A114

JEDEC Standard A115

ILTH1

Latch Up

100 + IDD

mA

JEDEC Standard 78

373 PGM T11.0

Note: 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

© 2000 Silicon Storage Technology, Inc.

12

S71142

373-3 11/00

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