STA32613TR データシートの表示（PDF） - STMicroelectronics
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STA32613TR Datasheet PDF : 43 Pages
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STA326
4.3 POWER ELECTRICAL CHARACTERISTCS
(VL = 3.3V; Vcc = 30V; Tamb = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
200 270 mΩ
Idss Power Pchannel/Nchannel
leakage Idss
Vcc=35V
50
µA
gN Power Pchannel RdsON Matching Id=1A
95
%
gP Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 1
10
20
ns
td ON Turn-on delay time
Resistive load
100
ns
td OFF Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load
25
ns
tf
Fall time
Resistive load; as fig. 1
25
ns
VCC Supply voltage operating voltage
10
36
V
IVCC- Supply Current from Vcc in
PWRDN PWRDN
PWRDN = 0
3
mA
IVCC-hiz Supply current from Vcc in Tri-
state
Vcc=30V; Tri-state
22
mA
IVCC Supply current from Vcc in
Input pulse width = 50% Duty;
80
mA
operation
Switching Frequency = 384Khz;
(both channel switching)
No LC filters;
Iout-sh Overcurrent protection threshold
(short circuit current limit)
4
6
A
VUV Undervoltage protection threshold
7
V
tpw-min Output minimum pulse width
No Load
70
150
ns
Po Output Power
(Full-bridge mode)
THD = 10%
RL = 4Ω; VS = 17V
RL = 8Ω; VS = 32V
30
W
60
W
Po Output Power
(Binary half-bridge mode)
THD = 1%
RL = 4Ω; VS = 17V
RL = 8Ω; VS = 32V
25
W
46
W
Po Mono mode output power
THD = 10%
RL = 4Ω; VS = 32V
60
W
120
W
THD+N Total Harmonic Distortion + Noise Po = 1 Wrms
0.07
%
Po = 40 Wrms
0.1
SNR Signal to Noise Ratio
A-Weighted
DDX® Mode
99
dB
Signal to Noise Ratio,
Binary Half-Bridge Mode
Binary Mode
A-Weighted
92
dB
η
Efficiency
DDX® Mode
89
%
Binary
87
%
6/43
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