STA510A13TR データシートの表示（PDF） - STMicroelectronics
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STA510A13TR Datasheet PDF : 17 Pages
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STA510A
Electrical specifications
3.4
Electrical characteristics
The specifications given here were obtained with the conditions VL = 3.3 V, VCC = 36 V,
RL = 8 Ω, fsw = 384 kHz and Tamb = 25 °C unless otherwise specified. See also Figure 3.
Table 6.
Symbol
.
Electrical characteristics
Parameter
Test conditions
Min
Typ Max Unit
RdsON
Idss
gN
gP
Dt_s
Dt_d
td ON
td OFF
tr
tf
VINH
Power P-channel / N-channel MOSFET
RdsON
Power P-channel / N-channel leakage
Power P-channel RdsON matching
Power N-channel RdsON matching
Low current dead time (static)
High current dead time (dynamic)
Turn-on delay time
Turn-off delay time
Rise time
Fall time
Id = 1 A
-
Id = 1 A
Id = 1 A
See test circuit in
Figure 3
L = 22 µH,
C = 470 nF,
RL = 8 Ω,
Id = 3 A,
seeFigure 5
Resistive load,
VCC = 30 V
Resistive load,
VCC = 30 V
Resistive load,
see Figure 3
High-level input voltage
-
VINL
Low-level input voltage
-
IINH
IINL
IPWRDNH
High-level Input current
Low-level input current
High-level PWRDN pin input current
VLOW
Low logical-state voltage (pins PWRDN,
TRISTATE)
VHIGH
High logical-state voltage (pins PWRDN,
TRISTATE)
ICCPWRDN Supply current from VCC in power down
IFAULT
Output current on pins FAULT and
THWARN with fault conditions
Pin voltage = VL
Pin voltage = 0.3 V
VL = 3.3 V
VL = 2.7 V
VL = 3.3 V
VL = 5.0 V
VL = 2.7 V
VL = 3.3 V
VL = 5.0 V
VPWRDN = 0 V
Vpin = 3.3 V
-
150
-
-
95
-
95
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
VL/2 -
300 mV
-
-
1
-
1
-
35
-
-
-
-
-
-
1.50 -
1.70 -
1.85 -
-
-
-
1
200 mΩ
100 µA
-
%
-
%
20
ns
50
ns
100 ns
100 ns
25
ns
25
ns
VL/2 +
300 mV
V
-
V
-
µA
-
µA
-
µA
0.70 V
0.80 V
0.85 V
-
V
-
V
-
V
3
mA
-
mA
Doc ID 11077 Rev 2
7/17
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