STA516B データシートの表示（PDF） - STMicroelectronics
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STA516B Datasheet PDF : 17 Pages
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Electrical specifications
STA516B
Unless otherwise stated, the test conditions for Table 6 below are VL = 3.3 V, VCC = 50 V
and Tamb = 25 °C
Table 6.
Symbol
Electrical characteristics
Parameter
Test conditions
Min Typ Max Unit
RdsON
Idss
Power P-channel/N-channel
MOSFET RdsON
Power P-channel/N-channel
leakage Idss
Idd = 1 A
-
-
200
-
-
gN
Power P-channel RdsON
matching
Idd = 1 A
95
-
gP
Power N-channel RdsON
matching
Idd = 1 A
95
-
Dt_s
Low current dead time (static) see Figure 2
-
10
Dt_d
High current dead time
(dynamic)
L = 22 µH, C = 470 nF
RL = 8 Ω, Idd = 4.5 A -
-
see Figure 3
td ON
td OFF
tr
Turn-on delay time
Turn-off delay time
Rise time
Resistive load
Resistive load
Resistive load
see Figure 2
-
-
-
-
-
-
tf
Fall time
Resistive load
see Figure 2
-
-
VIN-High High level input voltage
-
VIN-Low Low level input voltage
IIN-H
High level input current
IIN-L
Low level input current
IPWRDN-H
High level PWRDN pin input
current
VLow
Low logical state voltage
(pins PWRDN, TRISTATE)
(seeTable 7)
VHigh
High logical state voltage
(pins PWRDN, TRISTATE)
(seeTable 7)
IVCC-
PWRDN
IFAULT
Supply current from VCC in
power down
Output current on pins
FAULT, TH_WARN with fault
condition
IVCC-HiZ
Supply current from VCC in
3-state
-
VIN = VL
VIN = 0.3 V
VL = 3.3 V
VL = 3.3 V
VL = 3.3 V
VPWRDN = 0 V
Vpin = 3.3 V
VTRISTATE = 0 V
-
-
VL / 2 -
300 mV
-
-
1
-
1
-
35
0.8 -
-
-
-
-
1
-
22
240 mΩ
50
µA
-
%
-
%
20
ns
50
ns
100 ns
100 ns
25
ns
25
ns
VL / 2 +
300 mV
V
-
V
-
µA
-
µA
-
µA
V
1.7
V
2.4
mA
-
mA
-
mA
6/17
Doc ID 13183 Rev 4
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