STB70NF3LLT4(2006) データシートの表示（PDF） - STMicroelectronics

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STB70NF3LLT4
(Rev.:2006)

N-channel 30V - 0.0075Ω - 70A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB70NF3LL

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage (VGS = 0)

VDGR Drain-gate voltage (RGS = 20 kΩ)

VGS

Gate- source voltage

ID(1)

Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

PTOT Total dissipation at TC = 25°C

Derating factor

dv/dt (3) Peak diode recovery voltage slope

EAS (4) Single pulse avalanche energy

Tstg

Storage temperature

TJ

Operating junction temperature

1. Current limited by the package

2. Pulse width limited by safe operating area

3. ISD ≤70A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX

4. Starting TJ = 25 oC, ID = 35A, VDD = 25V

Table 2. Thermal data

Symbol

Parameter

RthJC

RthJA

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Electrical ratings

Value

30

30

± 16

70

50

280

100

0.67

5.5

500

-55 to 175

Unit

V

V

V

A

A

A

W

W/°C

V/ns

mJ

°C

Value

1.5

62.5

300

Unit

°C/W

°C/W

°C

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