D95N04(2005) データシートの表示（PDF） - STMicroelectronics

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D95N04
(Rev.:2005)

N-CHANNEL 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET

STMicroelectronics 

STD95N04 - STP95N04

2 Electrical characteristics

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

V(BR)DSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate Body Leakage Current

(VDS = 0)

Gate Threshold Voltage

Static Drain-Source On

Resistance

Test Conditions

Min.

ID = 250µA, VGS= 0

40

VDS = Max Rating,

VDS = Max Rating,Tc = 125°C

VGS = ±20V

VDS= VGS, ID = 250µA

2

VGS= 10V, ID= 40A

Typ.

5.4

Max.

10

100

±200

4

6.5

Unit

V

µA

µA

nA

V

mΩ

Table 4. Dynamic

Symbol

Parameter

Test Conditions

gfs Note 6

Ciss

Coss

Crss

Qg

Qgs

Qgd

Forward Transconductance VDS =25V, ID=40A

Input Capacitance

Output Capacitance

VDS =25V, f=1 MHz, VGS=0

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=20V, ID = 80A

VGS =10V

(see Figure 13)

Min. Typ. Max. Unit

100

S

2200

pF

580

pF

40

pF

40

54

nC

11

nC

8

nC

3/14

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