SUB75N08-10 データシートの表示（PDF） - Vishay Semiconductors
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SUB75N08-10 Datasheet PDF : 4 Pages
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SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
VGS = 10 V
9V
8V
200
7V
150
100
50
0
0
120
100
80
60
6V
4V
5V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
Transconductance
TC = –55_C
25_C
125_C
Transfer Characteristics
200
150
100
50
0
0
TC = 125_C
25_C
2
4
–55_C
6
8
VGS – Gate-to-Source Voltage (V)
0.012
On-Resistance vs. Drain Current
0.010
0.008
0.006
VGS = 10 V
VGS = 20 V
40
0.004
20
0.002
0
0
7000
20
40
60
80
100
VGS – Gate-to-Source Voltage (V)
Capacitance
6000
5000
Ciss
4000
3000
2000
1000
Crss
Coss
0
0
10
20
30
40
50
60
VDS – Drain-to-Source Voltage (V)
0
0
20
40
60
80
100
ID – Drain Current (A)
Gate Charge
20
16
VDS = 30 V
ID = 75 A
12
8
4
0
0
25 50 75 100 125 150 175
Qg – Total Gate Charge (nC)
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3
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