SUM09MN20-270 データシートの表示（PDF） - Vishay Semiconductors

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SUM09MN20-270

N-Channel 200-V (D-S) 175°C MOSFET

Vishay Semiconductors 

SUM09N20-270

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Junction Temperature

3.0

VGS = 10 V

2.5

ID = 5 A

2.0

1.5

1.0

0.5

0.0

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (_C)

Source-Drain Diode Forward Voltage

100

TJ = 150_C

10

TJ = 25_C

1

0

0.3

0.6

0.9

1.2

1.5

VSD - Source-to-Drain Voltage (V)

Drain Source Breakdown vs.

Junction Temperature

240

230

ID = 1.0 mA

220

210

200

190

180

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (_C)

www.vishay.com

4

Document Number: 72158

S-03414—Rev. A, 03-Mar-03

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