SUM09N20-270(2003) データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
SUM09N20-270 Datasheet PDF : 5 Pages
| |||
SUM09N20-270
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125_C
VDS = 160 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 5 A
VGS = 10 V, ID = 5 A, TJ = 125_C
VGS = 10 V, ID = 5 A, TJ = 175_C
VGS = 6 V, ID = 5 A
VDS = 15 V, ID = 5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Ciss
Coss
Crss
Qg
Qgs
Qgd
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 100 V, VGS = 10 V, ID = 10 A
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
RG
td(on)
tr
td(off)
tf
VDD = 100 V, RL = 10 W
ID ^ 10 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 10 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
200
V
2
4
"100
nA
1
50
mA
250
10
A
0.216
0.270
0.54
W
0.71
0.240
0.300
15
S
580
75
pF
30
11
17
2.7
nC
4
4.0
W
10
15
35
55
ns
25
40
40
60
9
A
10
0.9
1.5
V
100
150
ns
5
8
A
0.25
0.6
mC
www.vishay.com
2
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
Share Link: 