T1620 データシートの表示（PDF） - STMicroelectronics
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T1620 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
T1620W, T1630W
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dI/dt
On-state rms current (full sine wave)
Non repetitive surge peak on-state current (full
cycle, Tj initial = 25 °C)
F = 50 Hz
F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current IG = 2 x IGT , tr
≤ 100 ns
F = 120 Hz
VDSM/V Non repetitive surge peak off-state
RSM voltage
IGM Peak gate current
PG(AV) Average gate power dissipation
Tstg Storage junction temperature range
Tj Operating junction temperature range
tp = 10 ms
tp = 20 µs
Tc = 80 °C
t = 20 ms
t = 16.7 ms
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
16
200
218
220
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
A
A²s
A/µs
V
A
W
°C
Table 2.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value
T1620 T1630
IGT (1)
VGT
VGD
IH (2)
VD = 12 V RL = 30 Ω
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C
IT = 250 mA
IL IG = 1.2 IGT
dV/dt (2) VD = 67% VDRM, gate open, Tj = 125 °C
(dI/dt)c
(2)
Without snubber, Tj = 125 °C
I - II - III
I - II - III
I - II - III
I - III
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
20
30
1.3
0.2
35
50
70
80
80
100
300
500
8.5
11
Unit
mA
V
V
mA
mA
V/µs
A/ms
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
2/8
Doc ID 3759 Rev 1
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