T1620 データシートの表示（PDF） - STMicroelectronics
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T1620 Datasheet PDF : 8 Pages
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Characteristics
T1620W, T1630W
Figure 5. Surge peak on-state current versus Figure 6. Non-repetitive surge peak on-state
number of cycles
current for a sinusoidal
ITSM(A)
220
200
180
160
140
120
100
80
Repetitive
TC=80°C
60
40
20
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM(A), I2t (A2s)
10000
Tj initial=25°C
1000
dI/dt limitation:
50A/µs
pulse with width t <10 ms, and
corresponding value of I²t
ITSM
100
0.01
tp(ms)
0.10
I2t
1.00
10.00
Figure 7.
Relative variation of IGT,IH, IL vs
junction temperature
(typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
3.0
2.5
2.0
1.5
IGT
1.0
IH & IL
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Figure 8.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
(dV/dt) (V/µs)
1.0
10.0
100.0
Figure 9.
Relative variation of critical rate of decrease of main current versus junction
temperature
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
8
7
6
5
4
3
2
1
Tj(°C)
0
0
25
50
75
100
125
4/8
Doc ID 3759 Rev 1
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