Philips Semiconductors
GSM 4 W power amplifiers
APPLICATION INFORMATION
Objective specification
CGY2010G; CGY2011G
handbook, full pagewidth
PA
output
33 pF
(1)
8 (1)
pF
TRL3 (4)
48 47 46 45 44 43 42 41 40 39 38 37
1
VDD3
36
2
35
3
34
4
5
10 (1) 6
pF
7
8 RFO/VDD4
9
CGY2010G
CGY2011G
VDD2 33
32
VGG1 31
30
VDD1 29
28
10
27
RFI
11
26
12
25
DETO VGG2
13 14 15 16 17 18 19 20 21 22 23 24
10 pF
TRL2 (3)
27
1
pF
nF
47 Ω
39
1
pF nF
TRL1 (2)
−2 V
10 nH
100
Ω
Zc = 50 Ω
1.5 pF
100 pF
X7R
PA
input
39 Ω
100 Ω
10
pF 10
nF
100 pF
22
100 Ω nH
100 pF
Vcontrol
0.8 to 3 V
BSR14
PMOS
Ron < 0.1 Ω
560 Ω
PHP109
Vdiode
BAS70
BAS70
1 nF
Vbat
+4.8 V
1.25 V
1 kΩ
1 kΩ
39 pF
−90 µA
DC output
MGB764
(1) These capacitors are type: SMD0402; rest of the capacitors: SMD0603.
(2) TRL1: width: 0.3 mm; length: 16 mm.
(3) TRL2: width: 0.3 mm; length: 6.3 mm.
(4) TRL3: width: 0.3 mm; length: 20 mm.
Fig.3 Evaluation board schematic (FR4, 0.8 mm).
1996 Jul 08
8