1.5A HIGH-SPEED 30V MOSFET DRIVERS
1
TC4431
TC4432
ELECTRICAL CHARACTERISTICS (Cont.): Specifications measured over operating temperature range
Symbol
Parameter
with 5.0V ≤ VDD ≤ 30V, unless otherwise specified.
Test Conditions
Min
Typ Max
2 Unit
Input
VIH
Logic 1 High Input Voltage
2.4
—
—
V
VIL
Logic 0 Low Input Voltage
—
—
0.8
V
IIN
Input Current (Note 1)
0V ≤ VIN ≤ VDD (16V MAX)
–1
—
1
µA
Output
VOH
VOL
RO
High Output Voltage
Low Output Voltage
Output Resistance
IOUT = 100mA
VDD = 30V, IO = 10mA
VDD – 1.2
—
—
—
V
— 0.025 V
3
—
—
12
Ω
Switching Time (Note 2)
tR
Rise Time
tF
Fall Time
Figure 1
Figure 1
—
—
60
nsec
—
—
70
nsec
tD1
Delay Time
tD2
Delay Time
Power Supply
Figure 1
Figure 1
—
—
100
nsec
—
—
110
4 nsec
IS
Power Supply Current
VIN = 3V
VIN = 0V
—
—
6
mA
—
—
0.7
VS
Start-up Threshold
—
8.4
10
V
VDO
Drop-out Threshold
(Note 3)
7
7.7
—
V
NOTES: 1. For inputs >16V, add a 1kΩ resistor in series with the input. See graph on page 4 for input current.
2. Switching times are guaranteed by design.
3. For operation below 7V, the LOCK DIS., Pin 3 can be grounded to disable the lockout and start-up circuit.
5
PIN CONFIGURATIONS
VDD 1
8 VDD
VDD 1
8 VDD
IN 2
7 OUT
IN 2
7 OUT
TC4431
LOCK DIS 3
6 OUT
LOCK DIS 3 TC4432 6 OUT
6
GND 4
5 GND
GND 4
5 GND
7
2
7
2
6
INVERTING
6
NONINVERTING
NOTE: SOIC pinout is identical to DIP.
7
TELCOM SEMICONDUCTOR, INC.
8
4-259