TD351IN データシートの表示（PDF） - STMicroelectronics

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TD351IN

Advanced IGBT/MOSFET Driver

STMicroelectronics 

TD351

Electrical Characteristics

3 Electrical Characteristics

Table 4: Electrical characteristics for Tamb = -20 to 125°C, VH=16V (unless otherwise specified)

Symbol

Parameter

Input

Vton IN turn-on threshold voltage

Vtoff IN turn-off threshold voltage

tonmin Minimum pulse width

Iinp IN Input current

Voltage reference - Note 1

Vref Voltage reference

Iref

Maximum output current

Clamp

Vtclamp CLAMP pin voltage threshold

VCL Clamp low voltage

Delay

Vtdel Voltage threshold

Rdel Discharge resistor

Off Level

Iblvoff LVOFF peak input current (sink)

Violv Offset voltage

Outputs

Isink Output sink current

Isrc Output source current

VOL1 Output low voltage 1

VOL2 Output low voltage 2

VOH1 Output high voltage 1

VOH2 Output high voltage 2

tr

Rise time

tf

Fall time (2 step turn-off disabled)

tdon Turn on propagation delay

tdoff

Turn off propagation delay

(2-level turn-off disabled)

∆tw

Input to output pulse distortion

Under Voltage Lockout (UVLO)

UVLOH UVLO top threshold

UVLOL UVLO bottom threshold

Vhyst UVLO hysteresis

Supply current

Iin

Quiescent current

Test Condition

IN input voltage < 4.5V

T=25°C

Icsink=500mA

I=1mA

LVOFF=12V

LVOFF=12V

Vout=6V

Vout=VH-6V

Iosink=20mA

Iosink=500mA

Iosource=20mA

Iosource=500mA

CL=1nF, 10% to 90%

CL=1nF, 90% to 10%

10% output change:

Rd=4.7k, no Cd

Rd=10k, Cd=220pF

10% output change

10% output change,

∆tw=Twout-Twin

Vhyst=UVLOH-UVLOL

input low, no load

Min Typ Max Unit

0.8

1.0

V

4.0

4.2

V

100

135

220

ns

1

µA

4.85

5.00

5.15

V

10

mA

2.0

V

2.5

V

2.5

V

500

Ω

90

200

µA

-0.3 -0.15

0

V

1000 1700

mA

750 1300

mA

0.35

V

2.5

V

VH-2.5

V

VH-4.0

V

100

ns

100

ns

600

ns

1.8

2.0

2.2

µs

550

ns

50

100

ns

10

11

12

V

9

10

11

V

0.5

1

V

2.5

mA

Note: 1.Recommended capacitor range on VREF pin is 10nF to 100nF

4/12

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