TDA8933B データシートの表示（PDF） - NXP Semiconductors.
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TDA8933B Datasheet PDF : 42 Pages
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NXP Semiconductors
TDA8933B
Class D audio amplifier
Table 13. BTL characteristics
VP = 25 V, RL = 16 Ω, fi = 1 kHz, fosc = 320 kHz, RS < 0.1 Ω [1] and Tamb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Po(RMS)
RMS output power
continuous time output power[2]
RL = 8 Ω; VP = 17 V
THD+N = 0.5 %, fi = 1 kHz
11.9
13.7
-
THD+N = 0.5 %, fi = 100 Hz
-
13.7
-
THD+N = 10 %, fi = 1 kHz
15.4
17.1
-
THD+N = 10 %, fi = 100 Hz
RL = 16 Ω; VP = 25 V
-
17.1
-
THD+N = 0.5 %, fi = 1 kHz
14.9
16.5
-
THD+N = 0.5 %, fi = 100 Hz
-
16.5
-
THD+N = 10 %, fi = 1 kHz
18.9
20.6
-
THD+N
total harmonic
distortion-plus-noise
THD+N = 10 %, fi = 100 Hz
-
Po = 1 W
[3]
fi = 1 kHz
-
20.6
-
0.01
0.1
fi = 6 kHz
-
0.04
0.1
Gv(cl)
|Zi|
Vn(o)
closed-loop voltage gain
input impedance
output noise voltage
differential
Ri = 0 Ω
Operating mode
35
35
[4] -
36
37
50
-
100
150
Mute mode
[4] -
70
100
VO(mute)
mute output voltage
Mute mode; Vi = 1 V (RMS)
-
100
-
CMRR
common mode rejection
ratio
Vi(cm) = 1 V (RMS)
-
75
-
ηpo
output power efficiency
Po = 17 W; VP = 17 V; RL = 8 Ω
[5] 89
91
-
Po = 21 W; VP = 25 V; RL = 16 Ω
92
94
-
[1] RS is the total series resistance of an inductor and a ESR single ended capacitor in the application.
[2] Output power is measured indirectly; based on RDSon measurement.
[3] THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.
[4] B = 22 Hz to 20 kHz, AES17 brick wall.
[5] ηpo = 2-----⋅-2--P--⋅--o-P---+-o----P--
14. Application information
Unit
W
W
W
W
W
W
W
W
%
%
dB
kΩ
µV
µV
µV
dB
%
%
14.1 Output power estimation
The output power Po at THD+N = 0.5 %, just before clipping, for the SE and the BTL
configurations can be estimated using Equation 2 and Equation 3.
TDA8933B_1
Preliminary data sheet
Rev. 01 — 23 October 2008
© NXP B.V. 2008. All rights reserved.
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