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TEA1103 データシートの表示(PDF) - Philips Electronics

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TEA1103 Datasheet PDF : 28 Pages
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Philips Semiconductors
Fast charge ICs for NiCd and NiMH
batteries
SYMBOL
PARAMETER
CONDITIONS
Output drivers; AO, LS and PWM
IAO(source) analog output source current
IAO(sink)
analog output sink current
gm1
transconductance of amplifier
A1
Gv1,2
voltage gain of amplifiers
A1 and A2
Gv2
ILS(source)
voltage gain of amplifier A2
maximum source current
(pin LS)
ILS(sink)
maximum sink current
(pin LS)
IOH(PWM)
IOL(PWM)
δPWM
HIGH level output current
LOW level output current
maximum duty factor
Battery monitor; Vbat
IVbat
battery monitor input current
Vbat
voltage range of Vpeak
detection
Vbat/Vbat
Vpeak detection level with
respect to top level
Vbat
voltage resolution for Vpeak
Protections; Vbat
Vbat(l)
maximum voltage at pin Vbat
for detecting low battery
voltage
VAO = 3 V (p-p);
VLS = 2.8 V
VAO = 3 V (p-p);
VLS = 1.2 V
VIB = 50 mV
VAO = 3 V (p-p)
VAO = 2 V (p-p)
VLS = 2.25 V
VLS = 2.25 V
VPWM = 3 V
VPWM = 0.7 V
Vbat = 1.85 V
Vbat = 1.85 V;
Tj = 0 to 50 °C
Oscillator; pin OSC
Vosc(H)
HIGH level oscillator switching
voltage
Vosc(L)
LOW level oscillator switching
voltage
fosc(min)
fosc(max)
minimum oscillator frequency
maximum oscillator frequency
Rref = 125 kΩ;
Cosc = 400 pF
Rref = 12.5 kΩ;
Cosc = 400 pF
Preliminary specification
TEA1103; TEA1103T;
TEA1103TS
MIN.
TYP.
MAX. UNIT
9
50
250
72
11
25
21
16
21
19
15
10
14
79
0
mA
µA
µA/V
dB
dB
16
µA
25
µA
11
mA
18
mA
%
1
0.3
nA
2
V
0.25
%
0.6
mV
0.25
0.30
0.35
V
2.5
1.5
20.9
23
158
174
V
V
25.1
kHz
190
kHz
1999 Jan 27
16

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