TGA1045-EPU(2001) データシートの表示（PDF） - TriQuint Semiconductor
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TGA1045-EPU Datasheet PDF : 4 Pages
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Advance Product Information
January 9,2001
TGA1045-EPU
MAXIMUM RATINGS
Symbol
V+
I+
PD
PIN
TCH
TM
TSTG
Parameter 4/
Positive Supply Voltage
Positive Supply Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
17 V
3.06 A
52 W
23 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to
failure (MTTF). For maximum life it is recommended that junction
temperatures be maintained at the lowest possible levels.
3/ Total current for the entire MMIC
4/ These values represent the maximum operable values of this device
Symbol
Idss
Gm
VP
BVGS
BVGD
DC PROBE TESTS
(TA = 25 °C ± 5°C)
Parameter
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
255
180
-2.7
-30
-30
Maximum
480
315
-1
-17
-17
Value
mA
mS
V
V
V
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Vd = 9 V, Id = 990 mA
Symbol Parameter
Test Condition
Gain
IRL
ORL
PWR
Small Signal
Gain
Input Return
Loss
Output Return
Loss
Output Power
@ P1dB
F = 12 – 15GHz
F = 16 GHz
F = 17 – 18 GHz
F = 10 – 18 GHz
F = 10 – 13 GHz
F = 14 – 16 GHz
F = 17 – 18 GHz
F = 12 GHz
F = 14 GHz
F = 15 GHz
Limit
Min Typ Max
--- 21 ---
13.5 21 ---
--- 5 ---
--- -10 ---
Units
dB
dB
--- -2.5 ---
dB
--- -12 ---
--- -2.5 ---
10 25 --- dBm
33 35 ---
33 35 ---
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all
electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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