TGA4522 データシートの表示（PDF） - TriQuint Semiconductor
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TGA4522 Datasheet PDF : 12 Pages
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TGA4522
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
TCH
(OC)
RθJC Thermal Resistance
(channel to Case)
Vd = 6 V
Idq = 400 mA
Pdiss = 2.4 W
144
RθJC
(°C/W)
Tm
(HRS)
30.8
1.7E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier
at 70 oC baseplate temperature. Worst case condition with no RF applied, 100% of DC
power is dissipated.
Median Lifetime (Tm) vs. Channel Temperature
4
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