Philips Semiconductors
LIN transceiver
Product specification
TJA1020
Notes
1. All parameters are guaranteed over the virtual junction temperature by design, but only 100% tested at 125 °C
ambient temperature for dies on wafer level and, in addition to this, 100% tested at 25 °C ambient temperature for
cased products, unless otherwise specified.
2. For bare die, all parameters are only guaranteed if the backside of the bare die is connected to ground.
3. If VBAT is higher than 12 V, the battery current increases due to the internal LIN termination resistor. The minimum
value of this resistor is 20 kΩ. The maximum current increase is therefore: IBAT(increase) = V-----B---A2---T-0----–-k---Ω1----2-----V--
4. tf(slope)(dom) = (---t--V---L---I--N-----=-----4----0---%-----0-)--.-–-5---5-(--t--V----L--I--N-----=------9---5---%-------) ; see Fig.6.
5. tr(slope)(rec) = (---t--V---L---I--N-----=-----6----0---%---0---)-.-5-–---5--(--t--V----L--I--N-----=------5---%------) ; see Fig.6.
TIMING DIAGRAMS
handbook, full pagewidth
TXD
VLIN
50%
t PropTxDom
50%
t PropTxRec
100%
95%
0.5 VBAT
0.5 VBAT
RXD
5%
0%
t PropRxDom
50%
t PropRxRec
50%
t
MGW323
Fig.5 Timing diagram for AC characteristics, bus loaded.
2004 Jan 13
13