MB84VB2000 データシートの表示（PDF） - Fujitsu

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MB84VB2000

8M (× 8/× 16) FLASH MEMORY & 8M (× 8/× 16) FLASH MEMORY

Fujitsu 

MB84VB2000-10/MB84VB2001-10

s AC CHARACTERISTICS

• CE Timing

Parameter

Symbols

JEDEC Standard

Description

—

tCCR CE Recover Time

• Read Only Operations Characteristics

Parameter

Symbols

JEDEC Standard

Description

tAVAV

tRC Read Cycle Time

tAVQV

tACC Address to Output Delay

tELQV

tGLQV

tEHQZ

tGHQZ

tAXQX

—

—

tCE

tOE

tDF

tDF

tOH

tREADY

tELFL

tELFH

Chip Enable to Output Delay

Output Enable to Output Delay

Chip Enable to Output High-Z

Output Enable to Output High-Z

Output Hold Time from Addresses,

CE or OE, Whichever Occurs First

RESET Pin Low to Read Mode

CE or BYTE Switching Low or High

Note: Test Conditions–Output Load: 1 TTL gate and 30 pF

Input rise and fall times: 5 ns

Input pulse levels: 0.0 V to 3.0 V

Timing measurement reference level

Input: 1.5 V

Output: 1.5 V

Test Setup

-10

Unit

—

Min.

0

ns

Test

Setup

—

CE = VIL

OE = VIL

OE = VIL

—

—

—

—

—

—

-10

(Note)

Unit

Min. Max.

100

—

ns

—

100 ns

—

100 ns

—

40

ns

—

30

ns

—

30

ns

0

—

ns

—

20

µs

—

5

ns

13

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